Gruzza Bernard
Fonction : | Non permanent (UCA) |
Location : | EUPI Bat. 3/4/L |
Team : | Minamat-Surfaces (PHOTON) |
NUC section : | 28 |
Phone : | +33473407339 |
e-mail : | This email address is being protected from spambots. You need JavaScript enabled to view it. |
Associated publications :
44 publications found2022
ACL
Investigation of n2 plasma gaas surface passivation efficiency against air exposure: towards an enhanced diode
applied surface science, vol. 579, p. 152191
2022 apr
2020
The effect of nitridation on the optical properties of inas quantum dots grown on gaas substrate by mbe
vacuum, vol. 172, p. 109097
2020
2019
Study of GaN layer crystallization on GaAs(100) using electron cyclotron resonance or glow discharge N2 plasma sources for the nitriding process
Applied Surface Science, vol. 495, p. 143586
2019
2018
Multi-mode elastic peak electron microscopy (MM-EPEM): a new imaging technique with an ultimate in-depth resolution for surface analysis
Ultramicroscopy, vol. 188, p. 13--18
2018 may
Simulation and experimental studies of illumination effects on the current transport of nitridated gaas schottky diode
semiconductors, vol. 52, p. 1998--2006
2018
COM
Global study of self-limited plasma nitridation process for GaAs(100) surface passivation
7th International Conference NANOSEA NANO-structures and nanomaterials SELf-Assembly
2018
Modélisation de signaux XPS et cinétique de la passivation par une couche mince de GaN élaborée sur GaAs(100) par voie plasma N2
8ème conférence francophone sur les spectroscopies d’électrons (ELSPEC 2018), Biarritz, Juin 2018
2018
AFF
N2 plama passivation of GaAs(100) and air exposure study of GaN/GaAs structures by XPS, LEED, p-ARXPS and PL measurements
8ème conférence francophone sur les spectroscopies d’électrons (ELSPEC 2018), Biarritz, Juin 2018
2018
2017
Combined XPS model and growth kinetic model of passivating GaN thin film elaborated on GaAs
Journées des Spectroscopies Electroniques JSE2017, Juin 2017, Paris
2017
2016
ACL
Synthesis and study of stable and size-controlled zno-sio2 quantum dots: application as a humidity sensor
journal of physical chemistry c, vol. 120, p. 11652--11662
2016 may
ACTI
Study of the surface state density and potential in mis diode schottky using the surface photovoltage method
Molecular crystals and liquid crystals, vol. 627, p. 66--73
2016
COM
Nouvelle méthode de détermination de la fonction de correction d’un analyseur d’électron : Application aux études quantitatives par spectroscopies d’électrons : méthode combinée XPS + MM-EPES
ELSPEC 2016 Conférence francophone sur les spectroscopies d'électrons
2016
AFF
Determination of gold quantity deposited on silicon substrates by elastic electron measurements associated with Monte Carlo simulations and XPS measurements
ECASIA'15, 16th European Conference on Applications of Surface and Interface Analysis, Grenada, 28 sept.-1 oct, Espagne
2016
MM-EPES : Non destructive method for thin films analysis. Applications to Si nanoporous surfaces and Au deposits on SiO2/Si
ECASIA'15, 16th European Conference on Applications of Surface and Interface Analysis, Grenada, 28 sept.-1 oct, Espagne
2016
XPS and MM-EPES techniques combined for the study of ultra thin films: Application to gold deposition on SiO2/Si structures
JSPS International Workshop Core-to-Core Program Atomically Controlled Processing for Ultra-large Scale Integration Marseille - France, July 9-10, 2015 :
2016
2015
ACL
Effects of the GaN layers and the annealing on the electrical properties in the Schottky diodes based on nitrated GaAs
Superlattices and Microstructures, vol. 83, p. 827--833
2015
Study of the characteristics current-voltage and capacitance-voltage in nitride GaAs Schottky diode
The European Physical Journal – Applied Physics, vol. 72, p. 10102--10106
2015
XPS combined with MM-EPES technique for in situ study of ultra thin film deposition: Application to an Au/SiO2/Si structure
Applied Surface Science, vol. 357, p. 1268--1273
2015
AFF
Influence of surface core hole effects for quantitative X-ray photoelectron spectroscopy by peak shape analysis
ECASIA'15 European Conference on Applications of Surface and Interface Analysis
2015
Study of the surface state density and potential in MIS diode Schottky using the surface photovoltage method
13th International Conference on Frontiers of Polymers and Advanced Materials (ICFPAM) 29 March-2 April 2015, Marrakesh, Maroc
2015
2014
ACL
Energy dependence of the energy loss function parametrization of indium in the Drude-Lindhard model
Surface and Interface Analysis, vol. 46, p. 283--288
2014
Energy dependence of the energy loss function parametrization of indium in the drude-lindhard model
surface and interface analysis, vol. 46, p. 283--288
2014
New method for the determination of the correction function of a hemisperical electron analyser based on elastic electron images
Journal of Electron Spectroscopy and Related Phenomena, vol. 197, p. 80--87
2014
2013
Development of monte-carlo simulations for nano-patterning surfaces associated with mm-epes analysis: application to different si(111) nanoporous surfaces
surface science, vol. 618, p. 72--77
2013
Study of inp(100)nitridation using aes spectroscopy and electrical analysis: effect of annealing after nitridation
journal of optoelectronics and advanced materials, vol. 15, p. 509--513
2013
COM
High quality c-GaN ultra-thin film growth on GaAs (001): Passivating effect and initiation of cubic-GaN bulk structure growth
ECASIA'13 European Conference on Applications of Surface and Interface Analysis
2013
2012
ACL
Passivation of gaas(001) surface by the growth of high quality c-gan ultra-thin film using low power glow discharge nitrogen plasma source
surface science, vol. 606, p. 1093--1099
2012
2011
Study of the characteristics current-voltage and capacity-voltage of hg/gan/gaas structures
sensor letters, vol. 9, p. 2268--2271
2011
AFF
Study of high quality GaN epilayers formation on GaAs(001) using low power GDS nitrogen plasma source
ICFSI 13 International Conference on the formation of semiconductor Interfaces
2011
2010
ACL
Monte carlo simulation for multi-mode elastic peak electron spectroscopy of crystalline materials: effects of surface structure and excitation
surface science, vol. 604, p. 217--226
2010
Surface analysis of a plasma-nitrided structural steel
metalurgia international, vol. 15, p. 5--9
2010
2009
Electrical characterization and electronic transport modelization in the inn/lnp structures
sensor letters, vol. 7, p. 712--715
2009
First stages of surface steel nitriding: x-ray photoelectron spectroscopy and electrical measurements
applied surface science, vol. 255, p. 9206--9210
2009
Sem and xps studies of nanohole arrays on inp(1 0 0) surfaces created by coupling aao templates and low energy ar+ ion sputtering
surface science, vol. 603, p. 2923--2927
2009
Xps study of the o <inf>2</inf> /sf <inf>6</inf> microwave plasma oxidation of (0 0 1) gaas surfaces
applied surface science, vol. 256, p. 56--60
2009
AFF
XPS study of the O2/SF6 micro-wave plasma oxidation of (001)GaAs surfaces
ECOSS 26 26th European Conference on Surface Science
2009
2008
ACL
A study of the 42crmo4 steel surface by quantitative xps electron spectroscopy
applied surface science, vol. 254, p. 4738--4743
2008
Effect of surface roughness on epes and arepes measurements: flat and crenels silicon surfaces
surface science, vol. 602, p. 2114--2120
2008
Xps study of the formation of ultrathin gan film on gaas(1 0 0)
applied surface science, vol. 254, p. 4150--4153
2008
Xps, epma and microstructural analysis of a defective industrial plasma-nitrided steel
surface and coatings technology, vol. 202, p. 5887--5894
2008
2007
Combined eels, leed and sr-xps study of ultra-thin crystalline layers of indium nitride on inp(1 0 0)-effect of annealing at 450 °c
applied surface science, vol. 253, p. 4445--4449
2007
Study of porous iii-v semiconductors by electron spectroscopies (aes and xps) and optical spectroscopy (pl): effect of ionic bombardment and nitridation process
surface science, vol. 601, p. 4531--4535
2007
1998
Some applications of elastic peak electron spectroscopy for semiconductor surface studies
surface and interface analysis, vol. 26, p. 903--907
1998
1991
Transient stages during epitaxy of heterostructures on inp in a hvpe reactor. application to inp/inas/inp multiquantum wells growth
trans. tech. publications, vol. 36, p. 480--488
1991
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